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In Situ Back‐Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells
Author(s) -
Tan Furui,
Tan Hairen,
Saidaminov Makhsud I.,
Wei Mingyang,
Liu Mengxia,
Mei Anyi,
Li Peicheng,
Zhang Bowen,
Tan ChihShan,
Gong Xiwen,
Zhao Yongbiao,
Kirmani Ahmad R.,
Huang Ziru,
Fan James Z.,
QuinteroBermudez Rafael,
Kim Junghwan,
Zhao Yicheng,
Voznyy Oleksandr,
Gao Yueyue,
Zhang Feng,
Richter Lee J.,
Lu ZhengHong,
Zhang Weifeng,
Sargent Edward H.
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201807435
Subject(s) - passivation , materials science , perovskite (structure) , optoelectronics , semiconductor , layer (electronics) , energy conversion efficiency , band gap , polymer , planar , nanotechnology , chemical engineering , composite material , engineering , computer graphics (images) , computer science
Organic–inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge–transport layers. Here, in situ back‐contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permits—in contrast with previously studied insulator‐based passivants—the use of a relatively thick passivating layer. It is shown that a flat‐band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor: the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells.