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Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene
Author(s) -
Chen Zhaolong,
Liu Zhiqiang,
Wei Tongbo,
Yang Shenyuan,
Dou Zhipeng,
Wang Yunyu,
Ci Haina,
Chang Hongliang,
Qi Yue,
Yan Jianchang,
Wang Junxi,
Zhang Yanfeng,
Gao Peng,
Li Jinmin,
Liu Zhongfan
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201807345
Subject(s) - materials science , optoelectronics , graphene , epitaxy , light emitting diode , sapphire , nucleation , dislocation , diode , substrate (aquarium) , nanotechnology , optics , composite material , layer (electronics) , laser , chemistry , physics , oceanography , organic chemistry , geology
The growth of single‐crystal III‐nitride films with a low stress and dislocation density is crucial for the semiconductor industry. In particular, AlN‐derived deep‐ultraviolet light‐emitting diodes (DUV‐LEDs) have important applications in microelectronic technologies and environmental sciences but are still limited by large lattice and thermal mismatches between the epilayer and substrate. Here, the quasi‐van der Waals epitaxial (QvdWE) growth of high‐quality AlN films on graphene/sapphire substrates is reported and their application in high‐performance DUV‐LEDs is demonstrated. Guided by density functional theory calculations, it is found that pyrrolic nitrogen in graphene introduced by a plasma treatment greatly facilitates the AlN nucleation and enables fast growth of a mirror‐smooth single‐crystal film in a very short time of ≈0.5 h (≈50% decrease compared with the conventional process), thus leading to a largely reduced cost. Additionally, graphene effectively releases the biaxial stress (0.11 GPa) and reduces the dislocation density in the epilayer. The as‐fabricated DUV‐LED shows a low turn‐on voltage, good reliability, and high output power. This study may provide a revolutionary technology for the epitaxial growth of AlN films and provide opportunities for scalable applications of graphene films.