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Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga 2 In 4 S 9 toward High‐Performance UV Photodetection
Author(s) -
Wang Fakun,
Gao Ting,
Zhang Qi,
Hu ZhiYi,
Jin Bao,
Li Liang,
Zhou Xing,
Li Huiqiao,
Tendeloo Gustaaf,
Zhai Tianyou
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201806306
Subject(s) - materials science , ternary operation , responsivity , photodetection , alloy , gallium , photodetector , quantum efficiency , optoelectronics , chemical vapor deposition , indium , stoichiometry , nanotechnology , analytical chemistry (journal) , chemistry , composite material , metallurgy , chromatography , computer science , programming language
2D ternary systems provide another degree of freedom of tuning physical properties through stoichiometry variation. However, the controllable growth of 2D ternary materials remains a huge challenge that hinders their practical applications. Here, for the first time, by using a gallium/indium liquid alloy as the precursor, the synthesis of high‐quality 2D ternary Ga 2 In 4 S 9 flakes of only a few atomic layers thick (≈2.4 nm for the thinnest samples) through chemical vapor deposition is realized. Their UV‐light‐sensing applications are explored systematically. Photodetectors based on the Ga 2 In 4 S 9 flakes display outstanding UV detection ability ( R λ = 111.9 A W −1 , external quantum efficiency = 3.85 × 10 4 %, and D* = 2.25 × 10 11 Jones@360 nm) with a fast response speed (τ ring ≈ 40 ms and τ decay ≈ 50 ms). In addition, Ga 2 In 4 S 9 ‐based phototransistors exhibit a responsivity of ≈10 4 A W −1 @360 nm above the critical back‐gate bias of ≈0 V. The use of the liquid alloy for synthesizing ultrathin 2D Ga 2 In 4 S 9 nanostructures may offer great opportunities for designing novel 2D optoelectronic materials to achieve optimal device performance.