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Novel Molecular Doping Mechanism for n‐Doping of SnO 2 via Triphenylphosphine Oxide and Its Effect on Perovskite Solar Cells
Author(s) -
Tu Bao,
Shao Yangfan,
Chen Wei,
Wu Yinghui,
Li Xin,
He Yanling,
Li Jiaxing,
Liu Fangzhou,
Zhang Zheng,
Lin Yi,
Lan Xiaoqi,
Xu Leiming,
Shi Xingqiang,
Ng Alan Man Ching,
Li Haifeng,
Chung Lung Wa,
Djurišić Aleksandra B.,
He Zhubing
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201805944
Subject(s) - materials science , perovskite (structure) , doping , delocalized electron , dopant , work function , tin oxide , semiconductor , oxide , chemical physics , triphenylphosphine oxide , nanotechnology , optoelectronics , triphenylphosphine , chemical engineering , catalysis , chemistry , organic chemistry , layer (electronics) , engineering , metallurgy
Molecular doping of inorganic semiconductors is a rising topic in the field of organic/inorganic hybrid electronics. However, it is difficult to find dopant molecules which simultaneously exhibit strong reducibility and stability in ambient atmosphere, which are needed for n‐type doping of oxide semiconductors. Herein, successful n‐type doping of SnO 2 is demonstrated by a simple, air‐robust, and cost‐effective triphenylphosphine oxide molecule. Strikingly, it is discovered that electrons are transferred from the R3P + O − σ‐bond to the peripheral tin atoms other than the directly interacted ones at the surface. That means those electrons are delocalized. The course is verified by multi‐photophysical characterizations. This doping effect accounts for the enhancement of conductivity and the decline of work function of SnO 2 , which enlarges the built‐in field from 0.01 to 0.07 eV and decreases the energy barrier from 0.55 to 0.39 eV at the SnO 2 /perovskite interface enabling an increase in the conversion efficiency of perovskite solar cells from 19.01% to 20.69%.