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Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide
Author(s) -
Lee Byung Chul,
Na Junhong,
Choi Jun Hee,
Ji Hyunjin,
Kim GyuTae,
Joo MinKyu
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201805860
Subject(s) - materials science , rhenium , thermal conduction , condensed matter physics , van der waals force , quantum tunnelling , electron , conductivity , chemical physics , optoelectronics , composite material , chemistry , physics , organic chemistry , quantum mechanics , molecule , metallurgy
Charge carrier transport in multilayer van der Waals (vdW) materials, which comprise multiple conducting layers, is well described using Thomas–Fermi charge screening (λ TF ) and interlayer resistance ( R int ). When both effects occur in carrier transport, a channel centroid migrates along the c ‐axis according to a vertical electrostatic force, causing redistribution of the conduction centroid in a multilayer system, unlike a conventional bulk material. Thus far, numerous unique properties of vdW materials are discovered, but direct evidence for distinctive charge transport behavior in 2D layered materials is not demonstrated. Herein, the distinctive electron conduction features are reported in a multilayer rhenium disulfide (ReS 2 ), which provides decoupled vdW interaction between adjacent layers and much high interlayer resistivity in comparison with other transition‐metal dichalcogenides materials. The existence of two plateaus in its transconductance curve clearly reveals the relocation of conduction paths with respect to the top and bottom surfaces, which is rationalized by a theoretical resistor network model by accounting of λ TF and R int coupling. The effective tunneling distance probed via low‐frequency noise spectroscopy further supports the shift of electron conduction channel along the thickness of ReS 2 .