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Controllable Epitaxial Growth of Core–Shell PbSe@CsPbBr 3 Wire Heterostructures
Author(s) -
Fan Chao,
Xu Xing,
Yang Ke,
Jiang Feng,
Wang Songyang,
Zhang Qinglin
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201804707
Subject(s) - materials science , heterojunction , optoelectronics , photoluminescence , responsivity , epitaxy , semiconductor , chemical vapor deposition , photocurrent , nucleation , photodetector , nanotechnology , chemistry , organic chemistry , layer (electronics)
1D semiconductor core–shell wire heterostructures are crucial for high‐performance optical and optoelectronic device applications, but they are limited to the traditional semiconductor families. Here, the conformal epitaxy of CsPbBr 3 shell on PbSe wire core is realized to form the core–shell PbSe@CsPbBr 3 wire heterostructures via a chemical vapor deposition route. The Pb‐particle catalysts at the tips of the PbSe wires grown by vapor–liquid–solid provide the nucleation sites for the in situ rapid growth of CsPbBr 3 cube crystals, which serve as the adatom collector for the following shell growth due to the faster adsorption of the evaporated source atoms on them than on the sidewalls of PbSe wires. This determines the directional growth of the shell along the PbSe wires from the tip to bottom. The spectral and transient photoluminescence reveals the efficient photogenerated carrier transfer from the shell to the core. Importantly, the photodetectors (PDs) based on the heterostructures show responsivity up to 4.7 × 10 4 A W −1 under 405 nm light illumination, and a wavelength‐dependent photocurrent polarity with the excitation of the light from near‐ to mid‐infrared (IR), which indicates potential applications in IR PDs and novel optoelectronic logical circuits.