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Edge‐Epitaxial Growth of 2D NbS 2 ‐WS 2 Lateral Metal‐Semiconductor Heterostructures
Author(s) -
Zhang Yu,
Yin Lei,
Chu Junwei,
Shifa Tofik Ahmed,
Xia Jing,
Wang Feng,
Wen Yao,
Zhan Xueying,
Wang Zhenxing,
He Jun
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201803665
Subject(s) - heterojunction , materials science , chemical vapor deposition , epitaxy , semiconductor , photoluminescence , optoelectronics , monolayer , substrate (aquarium) , sapphire , nanotechnology , optics , physics , layer (electronics) , laser , oceanography , geology
2D metal‐semiconductor heterostructures based on transition metal dichalcogenides (TMDs) are considered as intriguing building blocks for various fields, such as contact engineering and high‐frequency devices. Although, a series of p–n junctions utilizing semiconducting TMDs have been constructed hitherto, the realization of such a scheme using 2D metallic analogs has not been reported. Here, the synthesis of uniform monolayer metallic NbS 2 on sapphire substrate with domain size reaching to a millimeter scale via a facile chemical vapor deposition (CVD) route is demonstrated. More importantly, the epitaxial growth of NbS 2 ‐WS 2 lateral metal‐semiconductor heterostructures via a “two‐step” CVD method is realized. Both the lateral and vertical NbS 2 ‐WS 2 heterostructures are achieved here. Transmission electron microscopy studies reveal a clear chemical modulation with distinct interfaces. Raman and photoluminescence maps confirm the precisely controlled spatial modulation of the as‐grown NbS 2 ‐WS 2 heterostructures. The existence of the NbS 2 ‐WS 2 heterostructures is further manifested by electrical transport measurements. This work broadens the horizon of the in situ synthesis of TMD‐based heterostructures and enlightens the possibility of applications based on 2D metal‐semiconductor heterostructures.