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E‐field Control of the RKKY Interaction in FeCoB/Ru/FeCoB/PMN‐PT (011) Multiferroic Heterostructures
Author(s) -
Wang Xinjun,
Yang Qu,
Wang Lei,
Zhou Ziyao,
Min Tai,
Liu Ming,
Sun Nian X.
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201803612
Subject(s) - condensed matter physics , materials science , antiferromagnetism , rkky interaction , ferromagnetism , heterojunction , magnetization , coupling (piping) , multiferroics , optoelectronics , physics , ferroelectricity , magnetic field , quantum mechanics , metallurgy , dielectric
E‐field control of antiferromagnetic (AFM) orders is promising for the realization of fast, compact, and energy‐efficient AFM applications. However, as the AFM spins are strongly pinned, the E‐field control process is mainly based on the exchange bias regulation that usually confines at a low temperature. Here, a new magnetoelectric (ME) coupling mechanism for the modulation of AFM orders at room temperature is explored. Based on the FeCoB/Ru/FeCoB/(011) Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 (PMN‐PT) synthetic antiferromagnetic (SAF) heterostructures, the external E‐field generates relative magnetization switching in the two ferromagnetic (FM) layers, leading the Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction tuning. This voltage‐induced switching behavior can be repeated in a stable and reversible manner for various SAFs, which is a key challenge in the E‐field control of AFM coupling and is not resolved yet. The voltage‐induced RKKY interaction changes by analyzing the dynamic optical and acoustic modes is quantified, and with first‐principles calculations, it is found that the distortion of the Fermi surface by the lattice reconstruction is the key of the relative magnetization switching and RKKY interaction modulation. This voltage control of the RKKY interaction in ME heterostructures provides an easy way to achieve the next generation of AFM/FM spintronic applications.