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Large‐Area Synthesis of Layered HfS 2(1− x ) Se 2 x Alloys with Fully Tunable Chemical Compositions and Bandgaps
Author(s) -
Wang Denggui,
Zhang Xingwang,
Guo Gencai,
Gao Shihan,
Li Xingxing,
Meng Junhua,
Yin Zhigang,
Liu Heng,
Gao Menglei,
Cheng Likun,
You Jingbi,
Wang Ruzhi
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201803285
Subject(s) - materials science , photodetector , chemical vapor deposition , band gap , semiconductor , optoelectronics , sapphire , transition metal , nanotechnology , laser , optics , biochemistry , chemistry , physics , catalysis
Alloying transition metal dichalcogenides (TMDs) with different compositions is demonstrated as an effective way to acquire 2D semiconductors with widely tunable bandgaps. Herein, for the first time, the large‐area synthesis of layered HfS 2(1− x ) Se 2 x alloys with fully tunable chemical compositions on sapphire by chemical vapor deposition is reported, greatly expanding and enriching the family of 2D TMDs semiconductors. The configuration and high quality of their crystal structure are confirmed by various characterization techniques, and the bandgap of these alloys can be continually modulated from 2.64 to 1.94 eV with composition variations. Furthermore, prototype HfS 2(1− x ) Se 2 x photodetectors with different Se compositions are fabricated, and the HfSe 2 photodetector manifests the best performance among all the tested HfS 2(1− x ) Se 2 x devices. Remarkably, by introducing a hexagonal boron nitride layer, the performance of the HfSe 2 photodetector is greatly improved, exhibiting a high on/off ratio exceeding 10 5 , an ultrafast response time of about 190 µs, and a high detectivity of 10 12 Jones. This simple and controllable approach opens up a new way to produce high‐quality 2D HfS 2(1− x ) Se 2 x layers, which are highly qualified candidates for the next‐generation application in high‐performance optoelectronics.