Premium
Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage‐Tunable Spintronic Devices
Author(s) -
Guan Mengmeng,
Wang Lei,
Zhao Shishun,
Zhou Ziyao,
Dong Guohua,
Su Wei,
Min Tai,
Ma Jing,
Hu Zhongqiang,
Ren Wei,
Ye ZuoGuang,
Nan CeWen,
Liu Ming
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201802902
Subject(s) - spintronics , materials science , yttrium iron garnet , spin pumping , magnetism , bilayer , condensed matter physics , ferromagnetism , heterojunction , ionic bonding , optoelectronics , spin polarization , spin hall effect , electron , physics , ion , quantum mechanics , membrane , biology , genetics
The voltage modulation of yttrium iron garnet (YIG) is of practical and theoretical significance; due to its advantages of compactness, high‐speed response, and energy efficiency, it can be used for various spintronic applications, including spin‐Hall, spin‐pumping, and spin‐Seebeck effects. In this study, a significant ferromagnetic resonance change is achieved within the YIG/Pt bilayer heterostructures uisng ionic modulation, which is accomplished by modifying the interfacial magnetism in the deposited “capping” platinum layer. With a small voltage bias of 4.5 V, a large ferromagnetic field shift of 690 Oe is achieved in heterostructures of YIG (13 nm)/Pt (3 nm)/(ionic liquid, IL)/(Au capacitor). The remarkable magnetoelectric (ME) tunability comes from the additional and voltage‐induced ferromagnetic ordering, caused by uncompensated d‐orbital electrons in the Pt metal layer. Confirmed by first‐principle calculations, this finding paves the way for novel voltage‐tunable YIG‐based spintronics.