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Control of Domain Structures in Multiferroic Thin Films through Defect Engineering
Author(s) -
Li Linze,
Jokisaari Jacob R.,
Zhang Yi,
Cheng Xiaoxing,
Yan Xingxu,
Heikes Colin,
Lin Qiyin,
Gadre Chaitanya,
Schlom Darrell G.,
Chen LongQing,
Pan Xiaoqing
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201802737
Subject(s) - materials science , multiferroics , thin film , polarization (electrochemistry) , monolayer , substrate (aquarium) , domain (mathematical analysis) , electrical conductor , nanotechnology , condensed matter physics , optoelectronics , ferroelectricity , composite material , mathematical analysis , chemistry , oceanography , mathematics , physics , geology , dielectric
Domain walls (DWs) have become an essential component in nanodevices based on ferroic thin films. The domain configuration and DW stability, however, are strongly dependent on the boundary conditions of thin films, which make it difficult to create complex ordered patterns of DWs. Here, it is shown that novel domain structures, that are otherwise unfavorable under the natural boundary conditions, can be realized by utilizing engineered nanosized structural defects as building blocks for reconfiguring DW patterns. It is directly observed that an array of charged defects, which are located within a monolayer thickness, can be intentionally introduced by slightly changing substrate temperature during the growth of multiferroic BiFeO 3 thin films. These defects are strongly coupled to the domain structures in the pretemperature‐change portion of the BiFeO 3 film and can effectively change the configuration of newly grown domains due to the interaction between the polarization and the defects. Thus, two types of domain patterns are integrated into a single film without breaking the DW periodicity. The potential use of these defects for building complex patterns of conductive DWs is also demonstrated.