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Anisotropic Magneto‐Coulomb Properties of 2D–0D Heterostructure Single Electron Device
Author(s) -
Mouafo Louis Donald Notemgnou,
Godel Florian,
Melinte Georgian,
HajjarGarreau Samar,
Majjad Hicham,
Dlubak Bruno,
Ersen Ovidiu,
Doudin Bernard,
Simon Laurent,
Seneor Pierre,
Dayen JeanFrancois
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201802478
Subject(s) - spintronics , materials science , condensed matter physics , heterojunction , magnetoresistance , coulomb blockade , ferromagnetism , quantum tunnelling , optoelectronics , magnetic field , physics , voltage , transistor , quantum mechanics
Fabrication and spintronics properties of 2D–0D heterostructures are reported. Devices based on graphene (“Gr”)–aluminium nanoclusters heterostructures show robust and reproducible single‐electron transport features, in addition to spin‐dependent functionality when using a top magnetic electrode. The magnetic orientation of this single ferromagnetic electrode enables the modulation of the environmental charge experienced by the aluminium nanoclusters. This anisotropic magneto‐Coulomb effect, originating from spin–orbit coupling within the ferromagnetic electrode, provides tunable spin valve‐like magnetoresistance signatures without the requirement of spin coherent charge tunneling. These results extend the capability of Gr to act both as electrode and as a platform for the growth of 2D–0D mixed‐dimensional van der Waals heterostructures, providing magnetic functionalities in the Coulomb blockade regime on scalable spintronic devices. These heterostructures pave the way towards novel device architectures at the crossroads of 2D material physics and spin electronics.