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Electromagnetic Functionalization of Wide‐Bandgap Dielectric Oxides by Boron Interstitial Doping
Author(s) -
Park DaeSung,
Rees Gregory J.,
Wang Haiyuan,
Rata Diana,
Morris Andrew J.,
Maznichenko Igor V.,
Ostanin Sergey,
Bhatnagar Akash,
Choi ChelJong,
Jónsson Ragnar D. B.,
Kaufmann Kai,
Kashtiban Reza,
Walker Marc,
Chiang ChengTien,
Thorsteinsson Einar B.,
Luo Zhengdong,
Park InSung,
Hanna John V.,
Mertig Ingrid,
Dörr Kathrin,
Gíslason Hafliði P.,
McConville Chris F.
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201802025
Subject(s) - materials science , doping , oxide , ferromagnetism , band gap , ionic bonding , boron , dielectric , chemical physics , surface modification , optoelectronics , condensed matter physics , nanotechnology , ion , chemical engineering , chemistry , physics , organic chemistry , quantum mechanics , engineering , metallurgy
Abstract A surge in interest of oxide‐based materials is testimony for their potential utility in a wide array of device applications and offers a fascinating landscape for tuning the functional properties through a variety of physical and chemical parameters. In particular, selective electronic/defect doping has been demonstrated to be vital in tailoring novel functionalities, not existing in the bulk host oxides. Here, an extraordinary interstitial doping effect is demonstrated centered around a light element, boron (B). The host matrix is a novel composite system, made from discrete bulk LaAlO 3 :LaBO 3 compounds. The findings show a spontaneous ordering of the interstitial B cations within the host LaAlO 3 lattices, and subsequent spin‐polarized charge injection into the neighboring cations. This leads to a series of remarkable cation‐dominated electrical switching and high‐temperature ferromagnetism. Hence, the induced interstitial doping serves to transform a nonmagnetic insulating bulk oxide into a ferromagnetic ionic–electronic conductor. This unique interstitial B doping effect upon its control is proposed to be as a general route for extracting/modifying multifunctional properties in bulk oxides utilized in energy and spin‐based applications.