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Field‐Free Programmable Spin Logics via Chirality‐Reversible Spin–Orbit Torque Switching
Author(s) -
Wang Xiao,
Wan Caihua,
Kong Wenjie,
Zhang Xuan,
Xing Yaowen,
Fang Chi,
Tao Bingshan,
Yang Wenlong,
Huang Li,
Wu Hao,
Irfan Muhammad,
Han Xiufeng
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201801318
Subject(s) - spintronics , chirality (physics) , materials science , magnetization , spin (aerodynamics) , spin hall effect , spin–orbit interaction , condensed matter physics , torque , magnetic field , optoelectronics , nanotechnology , physics , spin polarization , ferromagnetism , quantum mechanics , chiral symmetry breaking , quark , nambu–jona lasinio model , thermodynamics , electron
Spin–orbit torque (SOT)‐induced magnetization switching exhibits chirality (clockwise or counterclockwise), which offers the prospect of programmable spin‐logic devices integrating nonvolatile spintronic memory cells with logic functions. Chirality is usually fixed by an applied or effective magnetic field in reported studies. Herein, utilizing an in‐plane magnetic layer that is also switchable by SOT, the chirality of a perpendicular magnetic layer that is exchange‐coupled with the in‐plane layer can be reversed in a purely electrical way. In a single Hall bar device designed from this multilayer structure, three logic gates including AND, NAND, and NOT are reconfigured, which opens a gateway toward practical programmable spin‐logic devices.