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Quasi‐Solid‐State Single‐Atom Transistors
Author(s) -
Xie Fangqing,
Peukert Andreas,
Bender Thorsten,
Obermair Christian,
Wertz Florian,
Schmieder Philipp,
Schimmel Thomas
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201801225
Subject(s) - materials science , transistor , electrolyte , conductance , atom (system on chip) , chemical physics , nanotechnology , atomic physics , electrode , condensed matter physics , voltage , electrical engineering , chemistry , physics , computer science , embedded system , engineering
The single‐atom transistor represents a quantum electronic device at room temperature, allowing the switching of an electric current by the controlled and reversible relocation of one single atom within a metallic quantum point contact. So far, the device operates by applying a small voltage to a control electrode or “gate” within the aqueous electrolyte. Here, the operation of the atomic device in the quasi‐solid state is demonstrated. Gelation of pyrogenic silica transforms the electrolyte into the quasi‐solid state, exhibiting the cohesive properties of a solid and the diffusive properties of a liquid, preventing the leakage problem and avoiding the handling of a liquid system. The electrolyte is characterized by cyclic voltammetry, conductivity measurements, and rotation viscometry. Thus, a first demonstration of the single‐atom transistor operating in the quasi‐solid‐state is given. The silver single‐atom and atomic‐scale transistors in the quasi‐solid‐state allow bistable switching between zero and quantized conductance levels, which are integer multiples of the conductance quantum G 0 = 2 e 2 / h . Source–drain currents ranging from 1 to 8 µA are applied in these experiments. Any obvious influence of the gelation of the aqueous electrolyte on the electron transport within the quantum point contact is not observed.
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