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Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy
Author(s) -
Chen Yabin,
Chen Chaoyu,
Kealhofer Robert,
Liu Huili,
Yuan Zhiquan,
Jiang Lili,
Suh Joonki,
Park Joonsuk,
Ko Changhyun,
Choe Hwan Sung,
Avila José,
Zhong Mianzeng,
Wei Zhongming,
Li Jingbo,
Li Shushen,
Gao Hongjun,
Liu Yunqi,
Analytis James,
Xia Qinglin,
Asensio Maria C.,
Wu Junqiao
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201800754
Subject(s) - anisotropy , materials science , condensed matter physics , semiconductor , zigzag , plane (geometry) , black phosphorus , arsenic , nanotechnology , optoelectronics , physics , optics , geometry , metallurgy , mathematics
2D layered materials have emerged in recent years as a new platform to host novel electronic, optical, or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between the basal plane and cross the plane. The structural and property anisotropies inside their basal plane, however, are much less investigated. Black phosphorus, for example, is a 2D material that has such in‐plane anisotropy. Here, a rare chemical form of arsenic, called black‐arsenic (b‐As), is reported as a cousin of black phosphorus, as an extremely anisotropic layered semiconductor. Systematic characterization of the structural, electronic, thermal, and electrical properties of b‐As single crystals is performed, with particular focus on its anisotropies along two in‐plane principle axes, armchair (AC) and zigzag (ZZ). The analysis shows that b‐As exhibits higher or comparable electronic, thermal, and electric transport anisotropies between the AC and ZZ directions than any other known 2D crystals. Such extreme in‐plane anisotropies can potentially implement novel ideas for scientific research and device applications.