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Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory
Author(s) -
Park Sung Pyo,
Tak Young Jun,
Kim Hee Jun,
Lee Jin Hyeok,
Yoo Hyukjoon,
Kim Hyun Jae
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201800722
Subject(s) - resistive random access memory , materials science , optoelectronics , electrode , resistive touchscreen , biocompatibility , random access memory , layer (electronics) , nanotechnology , non volatile memory , electrical engineering , computer science , computer hardware , chemistry , metallurgy , engineering
Resistive random access memory (RRAM) devices are fabricated through a simple solution process using glucose, which is a natural biomaterial for the switching layer of RRAM. The fabricated glucose‐based RRAM device shows nonvolatile bipolar resistive switching behavior, with a switching window of 10 3 . In addition, the endurance and data retention capability of glucose‐based RRAM exhibit stable characteristics up to 100 consecutive cycles and 10 4 s under constant voltage stress at 0.3 V. The interface between the top electrode and the glucose film is carefully investigated to demonstrate the bipolar switching mechanism of the glucose‐based RRAM device. The glucose based‐RRAM is also evaluated on a polyimide film to verify the possibility of a flexible platform. Additionally, a cross‐bar array structure with a magnesium electrode is prepared on various substrates to assess the degradability and biocompatibility for the implantable bioelectronic devices, which are harmless and nontoxic to the human body. It is expected that this research can provide meaningful insights for developing the future bioelectronic devices.