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Ionic Gel Modulation of RKKY Interactions in Synthetic Anti‐Ferromagnetic Nanostructures for Low Power Wearable Spintronic Devices
Author(s) -
Yang Qu,
Zhou Ziyao,
Wang Liqian,
Zhang Hongjia,
Cheng Yuxin,
Hu Zhongqiang,
Peng Bin,
Liu Ming
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201800449
Subject(s) - spintronics , materials science , ferromagnetism , ionic bonding , modulation (music) , nanostructure , power (physics) , wearable technology , nanotechnology , optoelectronics , wearable computer , condensed matter physics , ion , computer science , physics , quantum mechanics , philosophy , embedded system , aesthetics
To meet the demand of developing compatible and energy‐efficient flexible spintronics, voltage manipulation of magnetism on soft substrates is in demand. Here, a voltage tunable flexible field‐effect transistor structure by ionic gel (IG) gating in perpendicular synthetic anti‐ferromagnetic nanostructure is demonstrated. As a result, the interlayer Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction can be tuned electrically at room temperature. With a circuit gating voltage, anti‐ferromagnetic (AFM) ordering is enhanced or converted into an AFM–ferromagnetic (FM) intermediate state, accompanying with the dynamic domain switching. This IG gating process can be repeated stably at different curvatures, confirming an excellent mechanical property. The IG‐induced modification of interlayer exchange coupling is related to the change of Fermi level aroused by the disturbance of itinerant electrons. The voltage modulation of RKKY interaction with excellent flexibility proposes an application potential for wearable spintronic devices with energy efficiency and ultralow operation voltage.