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Continuous Low‐Bias Switching of Superconductivity in a MoS 2 Transistor
Author(s) -
Chen Qihong,
Lu Jianming,
Liang Lei,
Zheliuk Oleksandr,
Ali El Yumin Abdurrahman,
Ye Jianting
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201800399
Subject(s) - materials science , superconductivity , transistor , optoelectronics , condensed matter physics , nanotechnology , electrical engineering , voltage , physics , engineering
Engineering the properties of quantum electron systems, e.g., tuning the superconducting phase using low driving bias within an easily accessible temperature range, is of great interest for exploring exotic physical phenomena as well as achieving real applications. Here, the realization of continuous field‐effect switching between superconducting and non‐superconducting states in a few‐layer MoS 2 transistor is reported. Ionic‐liquid gating induces the superconducting state close to the quantum critical point on the top surface of the MoS 2 , and continuous switching between the super/non‐superconducting states is achieved by HfO 2 back gating. The superconducting transistor works effectively in the helium‐4 temperature range and requires a gate bias as low as ≈10 V. The dual‐gate device structure and strategy presented here can be easily generalized to other systems, opening new opportunities for designing high‐performance 2D superconducting transistors.