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Chemical Growth of 1 T ‐TaS 2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity
Author(s) -
Wang Xinsheng,
Liu Haining,
Wu Juanxia,
Lin Junhao,
He Wen,
Wang Hui,
Shi Xinghua,
Suenaga Kazutomo,
Xie Liming
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201800074
Subject(s) - materials science , responsivity , bolometer , monolayer , thin film , optoelectronics , charge (physics) , charge density wave , analytical chemistry (journal) , nanotechnology , condensed matter physics , optics , photodetector , detector , physics , organic chemistry , chemistry , superconductivity , quantum mechanics
Ultrathin two‐dimensional (2D) charge density wave (CDW) materials, with sharp resistance change at the phase‐transition temperature, yet with ultrathin thickness, hold great potential for electrical device applications. However, chemical synthesis of high‐quality samples and observation of the CDW states down to the monolayer limit is still of great challenge. Chemical vapor deposition of 1 T ‐TaS 2 sheets on hexagonal boron nitride ( h ‐BN) with robust CDW states even down to the monolayer extreme is reported here. Further, based on the near commensurate CDW to incommensurate CDW phase transition with a high temperature coefficient of resistance (TCR), highly responsive room‐temperature bolometers are fabricated by suspending the as‐grown 1 T ‐TaS 2 sheets.