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Charge‐Trapping‐Induced Non‐Ideal Behaviors in Organic Field‐Effect Transistors
Author(s) -
Un HioIeng,
Cheng Peng,
Lei Ting,
Yang ChiYuan,
Wang JieYu,
Pei Jian
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201800017
Subject(s) - trapping , materials science , organic semiconductor , semiconductor , ideal (ethics) , transistor , charge (physics) , dielectric , optoelectronics , organic field effect transistor , field effect transistor , nanotechnology , chemical physics , voltage , chemistry , electrical engineering , physics , ecology , philosophy , epistemology , quantum mechanics , biology , engineering
Organic field‐effect transistors (OFETs) with impressively high hole mobilities over 10 cm 2 V −1 s −1 and electron mobilities over 1 cm 2 V −1 s −1 have been reported in the past few years. However, significant non‐ideal electrical characteristics, e.g., voltage‐dependent mobilities, have been widely observed in both small‐molecule and polymer systems. This issue makes the accurate evaluation of the electrical performance impossible and also limits the practical applications of OFETs. Here, a semiconductor‐unrelated, charge‐trapping‐induced non‐ideality in OFETs is reported, and a revised model for the non‐ideal transfer characteristics is provided. The trapping process can be directly observed using scanning Kelvin probe microscopy. It is found that such trapping‐induced non‐ideality exists in OFETs with different types of charge carriers (p‐type or n‐type), different types of dielectric materials (inorganic and organic) that contain different functional groups (OH, NH 2 , COOH, etc.). As fas as it is known, this is the first report for the non‐ideal transport behaviors in OFETs caused by semiconductor‐independent charge trapping. This work reveals the significant role of dielectric charge trapping in the non‐ideal transistor characteristics and also provides guidelines for device engineering toward ideal OFETs.