Premium
Memristors: A High‐On/Off‐Ratio Floating‐Gate Memristor Array on a Flexible Substrate via CVD‐Grown Large‐Area 2D Layer Stacking (Adv. Mater. 44/2017)
Author(s) -
Vu Quoc An,
Kim Hyun,
Nguyen Van Luan,
Won Ui Yeon,
Adhikari Subash,
Kim Kunnyun,
Lee Young Hee,
Yu Woo Jong
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201770322
Subject(s) - memristor , materials science , stacking , optoelectronics , layer (electronics) , chemical vapor deposition , fabrication , substrate (aquarium) , graphene , quantum tunnelling , nanotechnology , channel (broadcasting) , electrical engineering , alternative medicine , medicine , oceanography , physics , nuclear magnetic resonance , pathology , geology , engineering
A highly reliable memristor array using floating‐gate memory operated by two terminals (source and drain) using van der Waals' layered materials is demonstrated by Young Hee Lee, Woo Jong Yu, and co‐workers in article number 1703363 . Centimeter‐scale samples with MoS 2 as a channel and graphene as a trap layer grown by chemical vapor deposition are used for array fabrication, with Al 2 O 3 as a tunneling barrier. This work opens up the possibility to realize reliable and flexible memristors.