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Single‐Electron Transistors: Bottom‐Up Single‐Electron Transistors (Adv. Mater. 42/2017)
Author(s) -
Makarenko Ksenia S.,
Liu Zhihua,
de Jong Michel P.,
Zwanenburg Floris A.,
Huskens Jurriaan,
van der Wiel Wilfred G.
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201770302
Subject(s) - materials science , coulomb blockade , transistor , nanorod , substrate (aquarium) , electrode , optoelectronics , nanotechnology , electron transport chain , electrical engineering , voltage , physics , chemistry , oceanography , engineering , quantum mechanics , geology , biochemistry
In article number 1702920 , Ksenia S. Makarenko, Zhihua Liu, Wilfred G. van der Wiel, and co‐workers present single‐electron transistors (SETs) that are fabricated by a novel bottomup approach. The SETs are based on the self‐assembly of a single Au nanoparticle between two Au nanorods prior to deposition on a substrate. Individual assemblies are contacted to source and drain contacts and electrostatically tuned by a back‐gate electrode, and exhibit high‐quality single‐electron transport characteristics.