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Nanochannels: A 1D Vanadium Dioxide Nanochannel Constructed via Electric‐Field‐Induced Ion Transport and its Superior Metal–Insulator Transition (Adv. Mater. 39/2017)
Author(s) -
Xue Wuhong,
Liu Gang,
Zhong Zhicheng,
Dai Yuehua,
Shang Jie,
Liu Yiwei,
Yang Huali,
Yi Xiaohui,
Tan Hongwei,
Pan Liang,
Gao Shuang,
Ding Jun,
Xu XiaoHong,
Li RunWei
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201770286
Subject(s) - materials science , vanadium dioxide , electric field , nanoscopic scale , nanotechnology , insulator (electricity) , nanostructure , metal–insulator transition , vanadium , transition metal , optoelectronics , metal , engineering physics , thin film , chemistry , physics , quantum mechanics , metallurgy , biochemistry , engineering , catalysis
Nanoscale manipulation of materials' properties offers the clear possibility of developing novel electronic devices. In article number 1702162 , Gang Liu, Xiao‐Hong Xu, Run‐Wei Li, and co‐workers present the construction of 1D VO 2 nanochannels via electric‐field‐induced ion transport, showing a superior metal–insulator transition with fast speed, low power, and excellent reproducibility. The VO 2 nanostructure acts as promising candidate for the selector element in high‐density crossbar memory arrays.