Nanoporous Materials: Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact (Adv. Mater. 35/2017) | Zendy

Ling Haifeng | Zendy; Yi Mingdong | Zendy; Nagai Masaru | Zendy; Xie Linghai | Zendy; Wang Laiyuan | Zendy; Hu Bo | Zendy; Huang Wei | Zendy

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Nanoporous Materials: Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact (Adv. Mater. 35/2017)

Author(s) -

Ling Haifeng,

Yi Mingdong,

Nagai Masaru,

Xie Linghai,

Wang Laiyuan,

Hu Bo,

Huang Wei

Publication year - 2017

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201770249

Subject(s) - materials science , nanoporous , resistive random access memory , nanoscopic scale , resistive touchscreen , nanotechnology , layer (electronics) , electrical conductor , cone (formal languages) , polymer , contact resistance , optoelectronics , electrode , composite material , electrical engineering , computer science , chemistry , algorithm , engineering

The understanding of the growth kinetics of conductive filaments in soft polymers is crucial to achieve controllable and reliable resistive random access memory (RRAM). A simple solution‐processed and cone‐shaped contact method is developed by Mingdong Yi, Linghai Xie, Wei Huang, and co‐workers in article number 1701333 . The nanoscale engineering of a resistance‐switching layer opens the possibility of high‐performance flexible memory.

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