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Nanoporous Materials: Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact (Adv. Mater. 35/2017)
Author(s) -
Ling Haifeng,
Yi Mingdong,
Nagai Masaru,
Xie Linghai,
Wang Laiyuan,
Hu Bo,
Huang Wei
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201770249
Subject(s) - materials science , nanoporous , resistive random access memory , nanoscopic scale , resistive touchscreen , nanotechnology , layer (electronics) , electrical conductor , cone (formal languages) , polymer , contact resistance , optoelectronics , electrode , composite material , electrical engineering , computer science , chemistry , algorithm , engineering
The understanding of the growth kinetics of conductive filaments in soft polymers is crucial to achieve controllable and reliable resistive random access memory (RRAM). A simple solution‐processed and cone‐shaped contact method is developed by Mingdong Yi, Linghai Xie, Wei Huang, and co‐workers in article number 1701333 . The nanoscale engineering of a resistance‐switching layer opens the possibility of high‐performance flexible memory.