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Random Access Memory: Organic Ferroelectric‐Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half‐Selection Problem (Adv. Mater. 34/2017)
Author(s) -
Zhao Qiang,
Wang Hanlin,
Ni Zhenjie,
Liu Jie,
Zhen Yonggang,
Zhang Xiaotao,
Jiang Lang,
Li Rongjin,
Dong Huanli,
Hu Wenping
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201770246
Subject(s) - ferroelectric ram , materials science , ferroelectricity , non volatile memory , dielectric , semiconductor memory , random access memory , memory cell , random access , transistor , nanotechnology , optoelectronics , non volatile random access memory , dynamic random access memory , computer memory , computer science , memory refresh , computer hardware , electrical engineering , engineering , voltage , operating system
Organic ferroelectric random access memory (FeRAM) shows the advantages of durable data storage and nondestructive readout as nonvolatile memory in flexible electronics. In article number 1701907 , Lang Jiang, Wenping Hu, and co‐workers present a novel FeRAM cell with one selection transistor and one ferroelectric memory transistor (1T1T) sharing a common dielectric, making multiple dielectric handling unnecessary and simplifying 1T1T memory fabrication. This technique offers wide prospects for half‐selection problem‐free, flexible memory cell arrays.