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Thin Film Transistors: Flexible Zinc–Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays (Adv. Mater. 30/2017)
Author(s) -
Marette Alexis,
Poulin Alexandre,
Besse Nadine,
Rosset Samuel,
Briand Danick,
Shea Herbert
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201770219
Subject(s) - materials science , actuator , elastomer , transistor , optoelectronics , voltage , dielectric , thin film transistor , electrical engineering , nanotechnology , composite material , layer (electronics) , engineering
High‐voltage flexible thin‐film transistors (HVTFTs) that can operate at an unprecedented 1 kV voltage are developed to drive dielectric elastomer actuators (DEAs), as reported in article number 1700880 by Herbert Shea and co‐workers. 16 HVTFTs are integrated with 16 DEAs, each operating at 1 kV, but individually switched using a 30 V gate voltage. Combining flexible HVTFTs with DEAs will lead to compact, complex, and compliant haptics and soft robotics.

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