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Magnetoelectricity: Unleashing the Full Potential of Magnetoelectric Coupling in Film Heterostructures (Adv. Mater. 10/2017)
Author(s) -
Palneedi Haribabu,
Maurya Deepam,
Kim GiYeop,
Annapureddy Venkateswarlu,
Noh MyoungSub,
Kang ChongYun,
Kim JongWoo,
Choi JongJin,
Choi SiYoung,
Chung SungYoon,
Kang SukJoong L.,
Priya Shashank,
Ryu Jungho
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201770071
Subject(s) - materials science , metglas , multiferroics , bilayer , thin film , heterojunction , pulsed laser deposition , nanotechnology , optoelectronics , composite material , ferroelectricity , membrane , dielectric , amorphous metal , genetics , alloy , biology
In article number 1605688, by Shashank Priya, Jungho Ryu, and co‐workers, an unprecedentedly strong intrinsic magnetoelectric (ME) coupling of 7 V cm −1 Oe −1 , as good as the theoretically predicted ME response, is demonstrated in a simple bilayer heterostructure of Pb(Zr,Ti)O 3 (PZT)/Metglas (FeBSi) fabricated by granule spray in vacuum (GSV) deposition and laser irradiation. This work establishes a new benchmark for the design and development of thin/thick film‐based multiferroic ME materials.