Premium
Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO 2 ‐Based Resistive Random Access Memory by In Situ TEM Studies (Adv. Mater. 10/2017)
Author(s) -
Li Chao,
Gao Bin,
Yao Yuan,
Guan Xiangxiang,
Shen Xi,
Wang Yanguo,
Huang Peng,
Liu Lifeng,
Liu Xiaoyan,
Li Junjie,
Gu Changzhi,
Kang Jinfeng,
Yu Richeng
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201770065
Subject(s) - materials science , resistive random access memory , hafnia , in situ , layer (electronics) , optoelectronics , electrical conductor , nanotechnology , oxide , resistive touchscreen , electrode , electrical engineering , composite material , metallurgy , cubic zirconia , ceramic , chemistry , physics , engineering , meteorology
Resistive switching processes in HfO 2 are demonstrated by electron holography and in situ energy filtered imaging in article number 1602976 by Jinfeng Kang, Richeng Yu, and co‐workers. The results identify that oxygen vacancies are generated gradually in the oxide layer under ramped electrical bias, resulting in the formation of conductive channels, and the switching process occurs at the top interface of the hafnia layer.