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Field‐Effect Transistors: Ambipolar Triple Cation Perovskite Field Effect Transistors and Inverters (Adv. Mater. 8/2017)
Author(s) -
Yusoff Abd. Rashid bin Mohd.,
Kim Hyeong Pil,
Li Xiuling,
Kim Jeongmo,
Jang Jin,
Nazeeruddin Mohammad Khaja
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201770057
Subject(s) - ambipolar diffusion , materials science , transistor , perovskite (structure) , field effect transistor , optoelectronics , electron , silicon , nanotechnology , engineering physics , electrical engineering , physics , crystallography , quantum mechanics , chemistry , voltage , engineering
In conventional transistors, silicon is undoubtedly an ideal material, because electrons flowing through the circuitry encounter low amounts of resistance, yet approaching its fundamental barrier. This leads to research into alternative materials such as perovskite. Ambipolar perovskite fieldeffect transistors and inverters with balanced mobilities are demonstrated in article number 1602940 by Jin Jang, Mohammad Khaja Nazeeruddin and co‐workers.