Co/Pt Multilayers: Initialization‐Free Multilevel States Driven by Spin–Orbit Torque Switching (Adv. Mater. 8/2017) | Zendy

Huang KuoFeng | Zendy; Wang DingShuo | Zendy; Tsai MingHan | Zendy; Lin HsiuHau | Zendy; Lai ChihHuang | Zendy

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Co/Pt Multilayers: Initialization‐Free Multilevel States Driven by Spin–Orbit Torque Switching (Adv. Mater. 8/2017)

Author(s) -

Huang KuoFeng,

Wang DingShuo,

Tsai MingHan,

Lin HsiuHau,

Lai ChihHuang

Publication year - 2017

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201770054

Subject(s) - initialization , materials science , magnetoresistive random access memory , torque , orbit (dynamics) , spin (aerodynamics) , domain (mathematical analysis) , spin transfer torque , magnetization , condensed matter physics , optoelectronics , random access memory , computer science , physics , mechanical engineering , magnetic field , aerospace engineering , computer hardware , engineering , thermodynamics , quantum mechanics , mathematics , mathematical analysis , programming language

Utilizing multi‐domain formation in Co/Pt multilayers, how to achieve multilevel storage in spin‐orbit‐torque MRAM is demonstrated in article number 1601575 by Chih‐Huang Lai and co‐workers. It is rather remarkable that, by modulating the writing pulse conditions, precise control of the final magnetization states can be achieved, independent of the initial configurations. The initialization‐free multilevel memory advances the spin‐orbit‐torque MRAM to higher storage density for practical applications.

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