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Reconfigurable Diodes Based on Vertical WSe 2 Transistors with van der Waals Bonded Contacts
Author(s) -
Avsar Ahmet,
Marinov Kolyo,
Marin Enrique Gonzalez,
Iannaccone Giuseppe,
Watanabe Kenji,
Taniguchi Takashi,
Fiori Gianluca,
Kis Andras
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201707200
Subject(s) - materials science , graphene , van der waals force , schottky barrier , optoelectronics , diode , transistor , work function , planar , schottky diode , nanotechnology , electrical engineering , layer (electronics) , molecule , voltage , physics , computer graphics (images) , engineering , quantum mechanics , computer science
New device concepts can increase the functionality of scaled electronic devices, with reconfigurable diodes allowing the design of more compact logic gates being one of the examples. In recent years, there has been significant interest in creating reconfigurable diodes based on ultrathin transition metal dichalcogenide crystals due to their unique combination of gate‐tunable charge carriers, high mobility, and sizeable band gap. Thanks to their large surface areas, these devices are constructed under planar geometry and the device characteristics are controlled by electrostatic gating through rather complex two independent local gates or ionic‐liquid gating. In this work, similar reconfigurable diode action is demonstrated in a WSe 2 transistor by only utilizing van der Waals bonded graphene and Co/h‐BN contacts. Toward this, first the charge injection efficiencies into WSe 2 by graphene and Co/h‐BN contacts are characterized. While Co/h‐BN contact results in nearly Schottky‐barrier‐free charge injection, graphene/WSe 2 interface has an average barrier height of ≈80 meV. By taking the advantage of the electrostatic transparency of graphene and the different work‐function values of graphene and Co/h‐BN, vertical devices are constructed where different gate‐tunable diode actions are demonstrated. This architecture reveals the opportunities for exploring new device concepts.