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Misorientation‐Angle‐Dependent Phase Transformation in van der Waals Multilayers via Electron‐Beam Irradiation
Author(s) -
Kim Un Jeong,
Lee Hyangsook,
Lee Woojin,
Jeong Hye Yun,
Kim Hyun,
Han Gang Hee,
Lee Hyo Sug,
Park Yeonsang,
Roh YoungGeun,
Lee Young Hee,
Lee Eunha,
Hwang Sung Woo
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201706864
Subject(s) - stacking , van der waals force , materials science , monolayer , misorientation , phase (matter) , crystallography , bilayer , condensed matter physics , chemical physics , molecular physics , nanotechnology , chemistry , composite material , microstructure , grain boundary , biochemistry , physics , organic chemistry , membrane , molecule
Abstract Misorientation‐angle dependence on layer thickness is an intriguing feature of van der Waals materials, which causes stark optical gain and electrical transport modulation. However, the influence of misorientation angle on phase transformation is not determined yet. Herein, this phenomenon in a MoS 2 multilayer via in situ electron‐beam irradiation is reported. An AA′‐stacked MoS 2 bilayer undergoes structural transformation from the 2H semiconducting phase to the 1T′ metallic phase, similar to a MoS 2 monolayer, which is confirmed via in situ transmission electron microscopy. Moreover, non‐AA′ stacking, which has no local AA′ stacking order in the Moiré pattern, does not reveal such a phase transformation. While a collective sliding motion of chalcogen atoms easily occurs during the transformation in AA′ stacking, in non‐AA′ stacking it is suppressed by the weak van der Waals strength and by the chalcogen atoms interlocked at different orientations, which disfavor their kinetics by the increased entropy of mixing.