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2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy
Author(s) -
Li Liang,
Wang Weike,
Gong Penglai,
Zhu Xiangde,
Deng Bei,
Shi Xingqiang,
Gao Guoying,
Li Huiqiao,
Zhai Tianyou
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201706771
Subject(s) - anisotropy , monolayer , materials science , germanium , condensed matter physics , phonon , semiconductor , symmetry (geometry) , band gap , conductance , optoelectronics , nanotechnology , optics , silicon , physics , geometry , mathematics
Germanium phosphide (GeP), a new member of the Group IV–Group V compounds, is introduced into the fast growing 2D family with experimental and theoretical demonstration of strong anisotropic physical properties. The indirect band gap of GeP can be drastically tuned from 1.68 eV for monolayer to 0.51 eV for bulk, with highly anisotropic dispersions of band structures. Thin GeP shows strong anisotropy of phonon vibrations. Moreover, photodetectors based on GeP flakes show highly anisotropic behavior with anisotropic factors of 1.52 and 1.83 for conductance and photoresponsivity, respectively. This work lays the foundation and ignites future research interests in Group IV–Group V compound 2D materials.