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Dynamic and Tunable Threshold Voltage in Organic Electrochemical Transistors
Author(s) -
Doris Sean E.,
Pierre Adrien,
Street Robert A.
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201706757
Subject(s) - materials science , transistor , threshold voltage , optoelectronics , electronic circuit , noise margin , electrode , interfacing , electronics , amplifier , voltage , nanotechnology , electrical engineering , cmos , computer science , physics , engineering , quantum mechanics , computer hardware
In recent years, organic electrochemical transistors (OECTs) have found applications in chemical and biological sensing and interfacing, neuromorphic computing, digital logic, and printed electronics. However, the incorporation of OECTs in practical electronic circuits is limited by the relative lack of control over their threshold voltage, which is important for controlling the power consumption and noise margin in complementary and unipolar circuits. Here, the threshold voltage of OECTs is precisely tuned over a range of more than 1 V by chemically controlling the electrochemical potential at the gate electrode. This threshold voltage tunability is exploited to prepare inverters and amplifiers with improved noise margin and gain, respectively. By coupling the gate electrode with an electrochemical oscillator, single‐transistor oscillators based on OECTs with dynamic time‐varying threshold voltages are prepared. This work highlights the importance of electrochemistry at the gate electrode in determining the electrical properties of OECTs, and opens a path toward the system‐level design of low‐power OECT‐based electronics.