Premium
A High‐Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors
Author(s) -
Pei Ke,
Ren Xiaochen,
Zhou Zhiwen,
Zhang Zhichao,
Ji Xudong,
Chan Paddy Kwok Leung
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201706647
Subject(s) - materials science , transistor , optoelectronics , substrate (aquarium) , organic semiconductor , benzothiophene , non volatile memory , fabrication , organic field effect transistor , active matrix , thin film transistor , voltage , field effect transistor , nanotechnology , layer (electronics) , electrical engineering , organic chemistry , engineering , medicine , oceanography , chemistry , alternative medicine , pathology , geology , thiophene
Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3‐ d ;2′,3′‐ d′ ]naphtho[2,3‐ b ;6,7‐ b′ ]dithiophene (BBTNDT) organic field‐effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V −1 s −1 , photoresponsivity of 433 A W −1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2‐ b ][1]benzothiophene (BTBT) derivatives as organic semiconductors for high‐performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer.