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Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials
Author(s) -
Teng Feng,
Hu Kai,
Ouyang Weixin,
Fang Xiaosheng
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201706262
Subject(s) - photodetection , photodetector , semiconductor , materials science , heterojunction , photoelectric effect , optoelectronics , nanotechnology , semiconductor materials , engineering physics , physics
Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p‐Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p‐type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p‐type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p–i–n junctions, and metal–semiconductor junctions of photodetectors based on inorganic p‐type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.