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A General Method for the Chemical Synthesis of Large‐Scale, Seamless Transition Metal Dichalcogenide Electronics
Author(s) -
Li Li,
Guo Yichuan,
Sun Yuping,
Yang Long,
Qin Liang,
Guan Shouliang,
Wang Jinfen,
Qiu Xiaohui,
Li Hongbian,
Shang Yuanyuan,
Fang Ying
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201706215
Subject(s) - materials science , ohmic contact , nanotechnology , carbon nanotube , chemical vapor deposition , electronics , substrate (aquarium) , electrode , optoelectronics , transition metal , photodetector , catalysis , layer (electronics) , electrical engineering , biochemistry , oceanography , chemistry , geology , engineering
Abstract The capability to directly build atomically thin transition metal dichalcogenide (TMD) devices by chemical synthesis offers important opportunities to achieve large‐scale electronics and optoelectronics with seamless interfaces. Here, a general approach for the chemical synthesis of a variety of TMD (e.g., MoS 2 , WS 2 , and MoSe 2 ) device arrays over large areas is reported. During chemical vapor deposition, semiconducting TMD channels and metallic TMD/carbon nanotube (CNT) hybrid electrodes are simultaneously formed on CNT‐patterned substrate, and then coalesce into seamless devices. Chemically synthesized TMD devices exhibit attractive electrical and mechanical properties. It is demonstrated that chemically synthesized MoS 2 –MoS 2 /CNT devices have Ohmic contacts between MoS 2 /CNT hybrid electrodes and MoS 2 channels. In addition, MoS 2 –MoS 2 /CNT devices show greatly enhanced mechanical stability and photoresponsivity compared with conventional gold‐contacted devices, which makes them suitable for flexible optoelectronics. Accordingly, a highly flexible pixel array based on chemically synthesized MoS 2 –MoS 2 /CNT photodetectors is applied for image sensing.