Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch | Zendy

Guo ErJia | Zendy; Liu Yaohua | Zendy; Sohn Changhee | Zendy; Desautels Ryan D. | Zendy; Herklotz Andreas | Zendy; Liao Zhaoliang | Zendy; Nichols John | Zendy; Freeland John W. | Zendy; Fitzsimmons Michael R. | Zendy; Lee Ho Nyung | Zendy

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Oxygen Diode Formed in Nickelate Heterostructures by Chemical Potential Mismatch

Author(s) -

Guo ErJia,

Liu Yaohua,

Sohn Changhee,

Desautels Ryan D.,

Herklotz Andreas,

Liao Zhaoliang,

Nichols John,

Freeland John W.,

Fitzsimmons Michael R.,

Lee Ho Nyung

Publication year - 2018

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201705904

Subject(s) - materials science , x ray photoelectron spectroscopy , oxygen , chemical state , lanio , heterojunction , thin film , perovskite (structure) , oxide , pulsed laser deposition , absorption spectroscopy , chemical bath deposition , x ray absorption spectroscopy , transition metal , analytical chemistry (journal) , optoelectronics , nanotechnology , chemical engineering , optics , ferroelectricity , catalysis , chemistry , physics , organic chemistry , biochemistry , chromatography , engineering , metallurgy , dielectric

Deliberate control of oxygen vacancy formation and migration in perovskite oxide thin films is important for developing novel electronic and iontronic devices. Here, it is found that the concentration of oxygen vacancies (V O ) formed in LaNiO 3 (LNO) during pulsed laser deposition is strongly affected by the chemical potential mismatch between the LNO film and its proximal layers. Increasing the V O concentration in LNO significantly modifies the degree of orbital polarization and drives the metal–insulator transition. Changes in the nickel oxidization state and carrier concentration in the films are confirmed by soft X‐ray absorption spectroscopy and optical spectroscopy. The ability to unidirectional‐control the oxygen flow across the heterointerface, e.g., a so‐called “oxygen diode”, by exploiting chemical potential mismatch at interfaces provides a new avenue to tune the physical and electrochemical properties of complex oxides.

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