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Piezotronic Tuning of Potential Barriers in ZnO Bicrystals
Author(s) -
Keil Peter,
Trapp Maximilian,
Novak Nikola,
Frömling Till,
Kleebe HansJoachim,
Rödel Jürgen
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201705573
Subject(s) - materials science , piezoelectricity , optoelectronics , interfacing , semiconductor , ferroelectricity , polarization (electrochemistry) , transistor , diode , semiconductor device , nanotechnology , voltage , dielectric , electrical engineering , composite material , chemistry , political science , law , engineering , layer (electronics)
Coupling of magnetic, ferroelectric, or piezoelectric properties with charge transport at oxide interfaces provides the option to revolutionize classical electronics. Here, the modulation of electrostatic potential barriers at tailored ZnO bicrystal interfaces by stress‐induced piezoelectric polarization is reported. Specimen design by epitaxial solid‐state transformation allows for both optimal polarization vector alignment and tailoring of defect states at a semiconductor–semiconductor interface. Both quantities are probed by transmission electron microscopy. Consequently, uniaxial compressive stress affords a complete reduction of the potential barrier height at interfaces with head‐to‐head orientation of the piezoelectric polarization vectors and an increase in potential barrier height at interfaces with tail‐to‐tail orientation. The magnitude of this coupling between mechanical input and electrical transport opens pathways to the design of multifunctional electronic devices like strain triggered transistors, diodes, and stress sensors with feasible applications for human–computer interfacing.