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Magnetic‐Induced‐Piezopotential Gated MoS 2 Field‐Effect Transistor at Room Temperature
Author(s) -
Liu Yudong,
Guo Junmeng,
Yu Aifang,
Zhang Yang,
Kou Jinzong,
Zhang Ke,
Wen Rongmei,
Zhang Yan,
Zhai Junyi,
Wang Zhong Lin
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201704524
Subject(s) - materials science , field effect transistor , optoelectronics , transistor , magnetism , magnetostriction , magnetic field , nanoelectronics , charge carrier , voltage , condensed matter physics , nanotechnology , electrical engineering , physics , quantum mechanics , engineering
Utilizing magnetic field directly modulating/turning the charge carrier transport behavior of field‐effect transistor (FET) at ambient conditions is an enormous challenge in the field of micro–nanoelectronics. Here, a new type of magnetic‐induced‐piezopotential gated field‐effect‐transistor (MIPG‐FET) base on laminate composites is proposed, which consists of Terfenol‐D, a ferroelectric single crystal (PMNPT), and MoS 2 flake. When applying an external magnetic field to the MIPG‐FET, the piezopotential of PMNPT triggered by magnetostriction of the Terfenol‐D can serve as the gate voltage to effectively modulate/control the carrier transport process and the corresponding drain current at room temperature. Considering the two polarization states of PMNPT, the drain current is diminished from 9.56 to 2.9 µA in the P up state under a magnetic field of 33 mT, and increases from 1.41 to 4.93 µA in the P down state under a magnetic field of 42 mT and at a drain voltage of 3 V. The current on/off ratios in these states are 330% and 432%, respectively. This work provides a novel noncontact coupling method among magnetism, piezoelectricity, and semiconductor properties, which may have extremely important applications in magnetic sensors, memory and logic devices, micro‐electromechanical systems, and human–machine interfacing.