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Highly Crystalline C8‐BTBT Thin‐Film Transistors by Lateral Homo‐Epitaxial Growth on Printed Templates
Author(s) -
Janneck Robby,
Pilet Nicolas,
Bommanaboyena Satya Prakash,
Watts Benjamin,
Heremans Paul,
Genoe Jan,
Rolin Cedric
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201703864
Subject(s) - materials science , fabrication , organic semiconductor , epitaxy , optoelectronics , thin film , semiconductor , nanotechnology , layer (electronics) , organic electronics , evaporation , printed electronics , electronics , transistor , composite material , inkwell , voltage , medicine , chemistry , alternative medicine , physics , pathology , quantum mechanics , thermodynamics
Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high‐performance, low‐cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus‐guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device‐to‐device variability. Here, a double‐step method for organic semiconductor layers combining a solution‐processed templating layer and a lateral homo‐epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus‐guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high‐performance, large‐area electronics based on highly crystalline thin films of organic semiconductors.