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Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance
Author(s) -
Guo Zhinan,
Chen Si,
Wang Zhongzheng,
Yang Zhenyu,
Liu Fei,
Xu Yanhua,
Wang Jiahong,
Yi Ya,
Zhang Han,
Liao Lei,
Chu Paul K.,
Yu XueFeng
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201703811
Subject(s) - materials science , transistor , black phosphorus , optoelectronics , semiconductor , field effect transistor , ion , metal , nanotechnology , electrical engineering , chemistry , metallurgy , organic chemistry , voltage , engineering
Black phosphorus (BP), a burgeoning elemental 2D semiconductor, has aroused increasing scientific and technological interest, especially as a channel material in field‐effect transistors (FETs). However, the intrinsic instability of BP causes practical concern and the transistor performance must also be improved. Here, the use of metal‐ion modification to enhance both the stability and transistor performance of BP sheets is described. Ag + spontaneously adsorbed on the BP surface via cation–π interactions passivates the lone‐pair electrons of P thereby rendering BP more stable in air. Consequently, the Ag + ‐modified BP FET shows greatly enhanced hole mobility from 796 to 1666 cm 2 V −1 s −1 and ON/OFF ratio from 5.9 × 10 4 to 2.6 × 10 6 . The mechanisms pertaining to the enhanced stability and transistor performance are discussed and the strategy can be extended to other metal ions such as Fe 3+ , Mg 2+ , and Hg 2+ . Such stable and high‐performance BP transistors are crucial to electronic and optoelectronic devices. The stability and semiconducting properties of BP sheets can be enhanced tremendously by this novel strategy.