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Ultrasensitive and Fast All‐Inorganic Perovskite‐Based Photodetector via Fast Carrier Diffusion
Author(s) -
Yang Bin,
Zhang Fengying,
Chen Junsheng,
Yang Songqiu,
Xia Xusheng,
Pullerits Tõnu,
Deng Weiqiao,
Han Keli
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201703758
Subject(s) - photodetector , responsivity , materials science , optoelectronics , charge carrier , carrier lifetime , photoluminescence , perovskite (structure) , electron mobility , silicon , chemistry , crystallography
Low trap‐state density, high carrier mobility, and efficient charge carrier collection are key parameters for photodetectors with high sensitivity and fast response time. This study demonstrates a simple solution growth method to prepare CsPbBr 3 microcrystals (MCs) with low trap‐state density. Time‐dependent photoluminescence study with one‐photon excitation (OPE) and two‐photon excitation (TPE) indicates that CsPbBr 3 MCs exhibit fast carrier diffusion with carrier mobility over 100 cm 2 V −1 S −1 . Furthermore, CsPbBr 3 MC‐based photodetectors with high charge carriers' collection efficiency are fabricated. Such photodetectors show ultrahigh responsivity ( R ) up to 6 × 10 4 A W −1 with OPE and high R up to 6 A W −1 with TPE. The R for OPE is over one order of magnitude higher (the R for TPE is three orders of magnitude higher) than that of previously reported all‐inorganic perovskite‐based photodetectors. Moreover, the photodetectors exhibit fast response time of ≈1 ms, which corresponds to a gain ≈10 5 and a gain‐ bandwidth product of 10 8 Hz for OPE (a gain ≈10 3 and a gain‐bandwidth product of 10 6 Hz for TPE).