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Slow‐Photon‐Effect‐Induced Photoelectrical‐Conversion Efficiency Enhancement for Carbon‐Quantum‐Dot‐Sensitized Inorganic CsPbBr 3 Inverse Opal Perovskite Solar Cells
Author(s) -
Zhou Shujie,
Tang Rui,
Yin Longwei
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201703682
Subject(s) - perovskite (structure) , materials science , optoelectronics , energy conversion efficiency , photovoltaics , quantum dot , absorption (acoustics) , perovskite solar cell , halide , photovoltaic system , nanotechnology , chemical engineering , chemistry , inorganic chemistry , ecology , composite material , engineering , biology
Abstract All‐inorganic cesium lead halide perovskite is suggested as a promising candidate for perovskite solar cells due to its prominent thermal stability and comparable light absorption ability. Designing textured perovskite films rather than using planar‐architectural perovskites can indeed optimize the optical and photoelectrical conversion performance of perovskite photovoltaics. Herein, for the first time, this study demonstrates a rational strategy for fabricating carbon quantum dot (CQD‐) sensitized all‐inorganic CsPbBr 3 perovskite inverse opal (IO) films via a template‐assisted, spin‐coating method. CsPbBr 3 IO introduces slow‐photon effect from tunable photonic band gaps, displaying novel optical response property visible to naked eyes, while CQD inlaid among the IO frameworks not only broadens the light absorption range but also improves the charge transfer process. Applied in the perovskite solar cells, compared with planar CsPbBr 3 , slow‐photon effect of CsPbBr 3 IO greatly enhances the light utilization, while CQD effectively facilitates the electron–hole extraction and injection process, prolongs the carrier lifetime, jointly contributing to a double‐boosted power conversion efficiency (PCE) of 8.29% and an increased incident photon‐to‐electron conversion efficiency of up to 76.9%. The present strategy on CsPbBr 3 IO to enhance perovskite PCE can be extended to rationally design other novel optoelectronic devices.