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Chemical Intercalation of Topological Insulator Grid Nanostructures for High‐Performance Transparent Electrodes
Author(s) -
Guo Yunfan,
Zhou Jinyuan,
Liu Yujing,
Zhou Xu,
Yao Fengrui,
Tan Congwei,
Wu Jinxiong,
Lin Li,
Liu Kaihui,
Liu Zhongfan,
Peng Hailin
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201703424
Subject(s) - materials science , topological insulator , intercalation (chemistry) , electrode , van der waals force , nanomaterials , copper , optoelectronics , nanostructure , infrared , insulator (electricity) , nanotechnology , molecule , condensed matter physics , optics , chemistry , inorganic chemistry , physics , quantum mechanics , metallurgy
Abstract 2D layered nanomaterials with strong covalent bonding within layers and weak van der Waals' interactions between layers have attracted tremendous interest in recent years. Layered Bi 2 Se 3 is a representative topological insulator material in this family, which holds promise for exploration of the fundamental physics and practical applications such as transparent electrode. Here, a simultaneous enhancement of optical transmittancy and electrical conductivity in Bi 2 Se 3 grid electrodes by copper‐atom intercalation is presented. These Cu‐intercalated 2D Bi 2 Se 3 electrodes exhibit high uniformity over large area and excellent stabilities to environmental perturbations, such as UV light, thermal fluctuation, and mechanical distortion. Remarkably, by intercalating a high density of copper atoms, the electrical and optical performance of Bi 2 Se 3 grid electrodes is greatly improved from 900 Ω sq −1 , 68% to 300 Ω sq −1 , 82% in the visible range; with better performance of 300 Ω sq −1 , 91% achieved in the near‐infrared region. These unique properties of Cu‐intercalated topological insulator grid nanostructures may boost their potential applications in high‐performance optoelectronics, especially for infrared optoelectronic devices.