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Tunneling Diode Based on WSe 2 /SnS 2 Heterostructure Incorporating High Detectivity and Responsivity
Author(s) -
Zhou Xing,
Hu Xiaozong,
Zhou Shasha,
Song Hongyue,
Zhang Qi,
Pi Lejing,
Li Liang,
Li Huiqiao,
Lü Jingtao,
Zhai Tianyou
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201703286
Subject(s) - heterojunction , materials science , responsivity , optoelectronics , photodetector , quantum tunnelling , stacking , photodiode , diode , specific detectivity , van der waals force , physics , nuclear magnetic resonance , quantum mechanics , molecule
van der Waals (vdW) heterostructures based on atomically thin 2D materials have led to a new era in next‐generation optoelectronics due to their tailored energy band alignments and ultrathin morphological features, especially in photodetectors. However, these photodetectors often show an inevitable compromise between photodetectivity and photoresponsivity with one high and the other low. Herein, a highly sensitive WSe 2 /SnS 2 photodiode is constructed on BN thin film by exfoliating each material and manually stacking them. The WSe 2 /SnS 2 vdW heterostructure shows ultralow dark currents resulting from the depletion region at the junction and high direct tunneling current when illuminated, which is confirmed by the energy band structures and electrical characteristics fitted with direct tunneling. Thus, the distinctive WSe 2 /SnS 2 vdW heterostructure exhibits both ultrahigh photodetectivity of 1.29 × 10 13 Jones ( I ph / I dark ratio of ≈10 6 ) and photoresponsivity of 244 A W −1 at a reverse bias under the illumination of 550 nm light (3.77 mW cm −2 ).