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High‐Performance Flexible Photodetectors based on High‐Quality Perovskite Thin Films by a Vapor–Solution Method
Author(s) -
Hu Wei,
Huang Wei,
Yang Shuzhen,
Wang Xiao,
Jiang Zhenyu,
Zhu Xiaoli,
Zhou Hong,
Liu Hongjun,
Zhang Qinglin,
Zhuang Xiujuan,
Yang Junliang,
Kim Dong Ha,
Pan Anlian
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201703256
Subject(s) - materials science , perovskite (structure) , thin film , photodetector , optoelectronics , indium tin oxide , halide , indium , electroluminescence , layer (electronics) , nanotechnology , chemical engineering , inorganic chemistry , chemistry , engineering
Organometal halide perovskites are new light‐harvesting materials for lightweight and flexible optoelectronic devices due to their excellent optoelectronic properties and low‐temperature process capability. However, the preparation of high‐quality perovskite films on flexible substrates has still been a great challenge to date. Here, a novel vapor–solution method is developed to achieve uniform and pinhole‐free organometal halide perovskite films on flexible indium tin oxide/poly(ethylene terephthalate) substrates. Based on the as‐prepared high‐quality perovskite thin films, high‐performance flexible photodetectors (PDs) are constructed, which display a n R value of 81 A W −1 at a low working voltage of 1 V, three orders higher than that of previously reported flexible perovskite thin‐film PDs. In addition, these flexible PDs exhibit excellent flexural stability and durability under various bending situations with their optoelectronic performance well retained. This breakthrough on the growth of high‐quality perovskite thin films opens up a new avenue to develop high‐performance flexible optoelectronic devices.