Premium
Ultrathin Single‐Crystalline CdTe Nanosheets Realized via Van der Waals Epitaxy
Author(s) -
Cheng Ruiqing,
Wen Yao,
Yin Lei,
Wang Fengmei,
Wang Feng,
Liu Kaili,
Shifa Tofik Ahmed,
Li Jie,
Jiang Chao,
Wang Zhenxing,
He Jun
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201703122
Subject(s) - materials science , wurtzite crystal structure , van der waals force , cadmium telluride photovoltaics , anisotropy , optoelectronics , epitaxy , nanosheet , thin film , nanotechnology , crystal growth , crystal structure , crystal (programming language) , crystallography , optics , programming language , chemistry , physics , organic chemistry , layer (electronics) , zinc , molecule , computer science , metallurgy
Due to the novel physical properties, high flexibility, and strong compatibility with Si‐based electronic techniques, 2D nonlayered structures have become one of the hottest topics. However, the realization of 2D structures from nonlayered crystals is still a critical challenge, which requires breaking the bulk crystal symmetry and guaranteeing the highly anisotropic crystal growth. CdTe owns a typical wurtzite crystal structure, which hinders the 2D anisotropic growth of hexagonal‐symmetry CdTe. Here, for the first time, the 2D anisotropic growth of ultrathin nonlayered CdTe as thin as 4.8 nm via an effective van der Waals epitaxy method is demonstrated. The anisotropic ratio exceeds 10 3 . Highly crystalline nanosheets with uniform thickness and large lateral dimensions are obtained. The in situ fabricated ultrathin 2D CdTe photodetector shows ultralow dark current (≈100 fA), as well as high detectivity, stable photoswitching, and fast photoresponse speed (τ rising = 18.4 ms, τ decay = 14.7 ms). Besides, benefitting from its 2D planar geometry, CdTe nanosheet exhibits high compatibility with flexible substrates and traditional microfabrication techniques, indicating its significant potential in the applications of flexible electronic and optoelectronic devices.