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Wafer‐Scale Synthesis of Reliable High‐Mobility Molybdenum Disulfide Thin Films via Inhibitor‐Utilizing Atomic Layer Deposition
Author(s) -
Jeon Woojin,
Cho Yeonchoo,
Jo Sanghyun,
Ahn JiHoon,
Jeong SeongJun
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201703031
Subject(s) - molybdenum disulfide , materials science , wafer , nucleation , atomic layer deposition , thin film , nanotechnology , nanoelectronics , molybdenum , layer (electronics) , substrate (aquarium) , electron mobility , thin film transistor , chemical engineering , optoelectronics , organic chemistry , metallurgy , chemistry , oceanography , geology , engineering
A reliable and rapid manufacturing process of molybdenum disulfide (MoS 2 ) with atomic‐scale thicknesses remains a fundamental challenge toward its successful incorporation into high‐performance nanoelectronics. It is imperative to achieve rapid and scalable production of MoS 2 exhibiting high carrier mobility and excellent on/off current ratios simultaneously. Herein, inhibitor‐utilizing atomic layer deposition (iALD) is presented as a novel method to meet these requirements at the wafer scale. The kinetics of the chemisorption of Mo precursors in iALD is governed by the reaction energy and the steric hindrance of inhibitor molecules. By optimizing the inhibition of Mo precursor absorption, the nucleation on the substrate in the initial stage can be spontaneously tailored to produce iALD‐MoS 2 thin films with a significantly increased grain size and surface coverage (>620%). Moreover, highly crystalline iALD‐MoS 2 thin films, with thicknesses of only a few layers, excellent room temperature mobility (13.9 cm 2 V −1 s −1 ), and on/off ratios (>10 8 ), employed as the channel material in field effect transistors on 6″ wafers, are successfully prepared.